r�91��0�*s����#m��bM��5��5(�(�T�i The triac can be operated with either positive or negative gate control voltage but in normal operation usually the gate voltage is positive in … The reading shows the setting of main time base (time/div). This is expected because triac consists of two SCRs connected in parallel but opposite in … 01-04 2 Static characteristics of MOSFET and IGBT. 20µA) by … I am aware that as a member of the academic community it is my responsibility to turn in all suspected violators of the honor code. ; V GT is a range of gate voltages that will trigger conduction. NV6530 SCR Characteristic Trainer 2. Note: If the connections are made wrong the kit may get damaged. NOTE: You can check out and keep the portable breadboards, VB-106 or VB-108, from the 111-Lab for yourself ( Only one each please) This is the first of three labs on basic semiconductor components. V BO is the maximum forward or reverse voltage that the triac can tolerate before it breaks over into uncontrolled conduction. When is the sensitivity of TRIAC greatest? Increase in V BB1 increases the value of peak and valley voltages. Apparatus 1. The trigger pulse should be of sufficient magnitude and duration so that firing of the device is assured. Symbol Symbol Name Units E electric field V / cm VI CHARACTERISTICS OF TRIAC 8 3. P-N JUNCTION DIODE CHARACTERISTICS AIM: 1.To plot Volt-Ampere Characteristics of Germanium and Silicon P-N Junction Dual channel Oscilloscope 3. Characteristics of CE Transistor 4. 0000015657 00000 n Zener Diode Characteristics i) V-I Characteristics ii) Zener Diode act as a Voltage Regulator 4. ?��t��s���FV1���Y[Z,��I���g2�NI|w��^w&��U��&ut�&ut�OW���E��Y�lQ>�Ѯ%����˧7��C�Oo��_���-�~��.�'���E���EӮ�#��GE����x��F�+V�-6魆�>��3I�GEN�]�� iv List of Experiments Exp No Experiment Nmae Page No 1 Static characteristics of SCR and DIAC. RC Triggering Circuit – HWR & FWR 196. to a value of 50 mV to ensure linear operation. 7-15 3 Controlled HWR & FWR using RC Triggering circuit. BACKGROUND INFORMATION 3.1 CHART OF SYMBOLS Here is a chart of symbols used in this lab. 0000182678 00000 n The V-I characteristics for triac in the Ist and IIIrd quadrants are essentially identical to those of an SCR in the Ist quadrant. The triac has on and off state characteristics similar to SCR but now the char acteristic is applicable to both positive and negative voltages. Two AVO meter 4. endobj Experiment 5 Registration No. Testing triac using a multimeter. ��(�)0P��� Lab 3 Appendices: Data sheets and Curve Tracer operation. MT2 is positive with respect to MTX in the first quadrant and it is negative in the third quad rant. The corresponding collector current I C is noted. 2.5V-45V 1.5V-AGMRCET DEPT OF E&C Tabular Column: V1 = V DS2 =15V or 12V V GS V I DS (mA) 0V 8V(Max) (b) Drain Characteristics… This list is not all-inclusive; however, it does contain the most commonly used symbols. IPC LAB MANUAL 3361702 IC DEPARTMENT GOVERNMENT POLYTECHNIC GANDHINAGAR Page 6 Experiment No: 3 TRIAC Characteristics AIM: To study the V-I characteristics of a TRIAC in both directions and also in To plot the characteristics of SCR and to find the forward resistance, holding current and ... readings for every 5V and enter the readings in the tabular column. �(�t�KgJ%��J~u�)�P:�HL顁�����bJ�%?�U;(�t8P �(�cN�$�����. �4���.qE�T��C+�8r\U�u�������b�O�DHCJ�P��j�eI���qŴB� !��aC�&nY�qG1�*pl��*�%φ%�����@}5e>����h�ӛKf.\�ѹ=~��"Sa�v��q�̕ To plot the characteristics of SCR and to find the forward resistance, holding current and latching current. 0000000015 00000 n Output characteristics. ; V DRM is the maximum repetitive peak voltage (usually the maximum peak voltage of the applied AC wave) that can be reliably tolerated. Adjust +V A to 6.0 Vdc. 92 0 obj CircuitsToday.com is an effort to provide free resources on electronics for electronic students and hobbyists. Phone : 0120-2323854-58 2 | DEPARTMENT OF ELECTRICAL & ELECTRONICS ENGINEERING, Study the front panel carefully and observe the buttons on the screen. Notice from the I-V characteristics that the output collector current is controlled by the input base current as modeled in Equation. ��X�v UlޔIȎ)��{0�uS,�r1����{�Ȓsur;r���E푅������lqLj��̝����F����K����UluQ� Q�����̧��Rw��T�g�>�i㴞��.���չ8�SZ�e{�ٌ#��0W�xQ����V1����5�k�Pg�q�����&�E�&B�i���Ԛ 0000491583 00000 n 01-04 2 Static characteristics of MOSFET and IGBT. S. No. The gate current can control the TRIAC for either direction of polarity. Two AVO meter 4. Power Electronics Lab manual SSIT - 1 - CONTENTS Experiment No Page. 91 33 Quadrant I operation     :     VMT2, positive; VG1 positive, Quadrant II operation    :     VMT21 positive;  VGl negative, eval(ez_write_tag([[336,280],'circuitstoday_com-medrectangle-4','ezslot_3',109,'0','0']));Quadrant III operation  :      VMT21 negative; VGl negative, Quadrant IV operation   :     VMT21 negative; VG1 positive. EET120 Semiconductor Devices Experiment 1: Diode Characteristics By: Matthew Trump Online EET Department ECPI University I pledge to support the Honor System of ECPI. IGBT Characteristics 17 5. 0000491689 00000 n Objective The objectives of this experiment are to: a) determine the characteristics of flow over a rectangular and a triangular weir, and b) determine the value of the discharge coefficient for both notches. MOSFET Characteristics 154. 3. /Contents 94 0 R 0000015518 00000 n endobj The triac has on and off state characteristics similar to SCR but now the char acteristic is applicable to both positive and negative voltages. As���f�wS�f��)�]�1���m�ek startxref CIRCUIT DIAGRAM: Fig 1.1(a) Circuit diagram for VI characteristics of SCR. To determine holding, latching current and break over voltage of given SCR. Figure (2): RTD Characteristics Experiment. 0000373605 00000 n Characteristics of TRIAC The V-I characteristics of TRIAC are discussed below The triac is designed with two SCRs which are fabricated in the opposite direction in a crystal. 94 0 obj Characteristics AIM: To Test the V-I characteristics of S.C.R. 5 5.0 TRIAC TRIGGERING MODES 5.1 Create the TRIAC AC POWER CONTROL circuit block. Repeat the experiment with the V-notch weir plate, but with 5 mm increments in water surface elevation. 7-15 3 Controlled HWR & FWR using RCcircuit. The base current I B is kept constant (eg. Output characteristics The base current I B is kept constant (eg. 4. 1-6 2 Static characteristics of MOSFET & IGBT. 2. Power electronic trainer 2. �2�m�1�U��@�i�$�Y��ր ��4�� IPC LAB MANUAL 3361702 IC DEPARTMENT GOVERNMENT POLYTECHNIC GANDHINAGAR Page 1 Experiment No: 1 S.C.R. Record the readings. Physics LAB SUBJECT CODE: BT 2001 NAME OF DEPARTMENT: Engg. %%EOF The family of curves obtained by plotting I C against V CE for each value of I B is called output characteristics. The experiment is repeated with V CE kept constant say 2V, 3V, 4V etc. MOSFET Characteristics 15 4. You compiled your data and plotted the points on a graph to form a “family” of characteristic curves To get your data, you first set ��(�)0Pr�#��q@�O��b�B�>�J|���$�O���%>J|*��$�O���%>J|ʁ�$�O���%>J�^^�^[��>��} Table 1. TRIAC = TRI ode for A lternating C urrent. In this experiment, you measured the characteristics of a typical NPN Transistor-an MPSA20. TRIAC Characteristics 9 3. Power Electronics Lab 2010 TABLE OF CONTENTS Experiment # Particulars Page # 1 Static characteristics of SCR or DIAC. Characteristics of Triac Typical V-I characteristics of a triac are shown in figure. Operating characteristics of triac in the 1st and 3rd quadrants are similar but for the direction of flow of current and applied voltage. TRANSIENT 6. k��-��)4P�������@����˚BE�*l�%M��bME�ŗ5��5��_�(�T�`�/i a��+�����F]]�5���3U�. Inference: There is a negative resistance region from peak point to valley point. It can be triggered by reaching its breakover voltage (+ or -). Transistor characteristics: 1) Input characteristics Keeping the collector- emitter (V CE) voltage constant, the base- emitter (V BE) voltage is increased from 0 and the corresponding base current (I B) values are noted. �Sh�8�(Y|�@%@����,�`�d��X��u endobj <> I will refrain from any form of academic dishonesty or deception, such as cheating or plagiarism. The first quadrant is the region wherein MT2 is positive w.r.t MT1 and vice- versa for the third quadrant. 2) Output Characteristics. *TRIAC’s have very small switching frequencies. Lab X: I-V Characteristics of Metal-Oxide-Semiconductor Field Effect Transisitors (MOSFETs) – Page 6 Experimentally, the channel conductance in the linear region is measured by holding VDS to a value of 50 mV to ensure linear operation. ��(�)0P�S�%�} ... like a triac without gate terminal, as shown in figure. This is repeated for increasing values of I B. Do you know how RFID wallets work and how to make one yourself? Theory:-A Semiconductor diode is prepared by joining P and N sections of a %�쏢 Sketch the VI characteristics of TRIAC. Two DC power supply Introduction A thyristor is a four-layer p-n-p-n semiconductor device consisting of three p-n junctions. 6), connect the function generator and connect the oscilloscope to test points A and B. ☞Now Switch on SPDT then note down the readings. P-N Junction Diode Characteristics 3. k*�-��)4P�)�����@��R[|ISp�XS l�eM��bMy�ŗ5��4��K��ŚJ`�/k ~u-�l���[�~=�V��藰��������� ����o��O�^Y�{�x�Z��4������`�M���'x�r@(��� �9&�s8P9�jx4!|J���p4��9���0)���b>G��hB����a�N�s0L��#�V��'4L���V��'0L���V��'0L!��l=�ab=f�t=�a��B0L�^���@5@�`�; ��������R(�>4P �&���s:��ab��¤ԇ�� T� ��#�W�M}h�XOį:]O`�XOį:]O`�HOGį:[Oh�XOį:]O`�XOį:]O`����W��'4L��bӜ�'0Lt$�I�$�@ё��G�E0P��ħ9���01�caR>G�|���ф�9(��#bԜ��h����0 �Á">���hB�����s����2OTL.iaE�p����O�D��UH��i��bnnF�h�sa6��29s��`'s��"a��'g�o�|�n �b�Δq#�T�8a��$z��' T���X�ħ�K"�(�)0P�S`��'�`/��S`�ħ�@�O���oh*�K"�(�h�(����>*��*'@M ����%���^���@ ����CU5%���/6��b?4P�~p�R��=�O�:���Sh�d�J`���N���u The TRIAC is 5 layer, 3 terminal Power semiconductor device. In this experiment, you measured the characteristics of a typical NPN Transistor-an MPSA20. By applying proper signal to the gate, the firing angle of the device can be controlled. (6.3). It is a bidirectional device, means it can conduct current in both the directions. 6. Measure the voltage across R6 and across the triac, respectively. T����T�x��$ Physics Page 1 of 8 EXPERIMENT: DIODE & ZENER DIODE Objective:- To study the forward and reverse bias characteristics of �%d����f5�� This is expected because triac consists of two SCRs connected in parallel but opposite in direc tions. 20µA) by adjusting the rheostat Rh 1. The triac has on and off state characteristics similar to SCR but now the char acteristic is applicable to both positive and negative voltages. VI Characteristics of Zener Diode 3. of ECE CREC 3 1. 6.3.2 Graphical Analysis A graphical analysis of the BJT as both a switch and an amplifier can be obtained from the output I-V characteristics by means of a load-line construction. 8.2. In this lab, you will study the I-V characteristics and small-signal model of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). VI Characteristics of PN Junction Diode 2. Experiment (1) characteristics of the thyristor Experiment aim To study and plot the characteristics of the thyristor. NOTE: You can check out and keep the portable breadboards, VB-106 or VB-108, from the 111-Lab for yourself ( Only one each please) This is the first of three labs on basic semiconductor components. 2. It has a pair of phase controlled SCRs connected in inverse parallel manner on the same chip. _____ Power Electronics Lab, Department of Electrical Engineering, UET, Lahore. Expected graph: Plot the tabulated readings on a graph sheet with I E on X-axis and V E on Y-axis. POWER ELECTRONICS LAB CHARACTERISTICS OF IGBT Experiment 1c Aim: To study the output and transfer characteristics of IGBT Apparatus: Trainers Kit Ammeter (0-200mA) Voltmeter (0-20V) Patch Chords Circuit Diagram: Procedure: Out-Put Characteristics 6) Connect the collector, emitter and the gate terminals to the characteristics circuit A multimeter can be used to test the health of a triac. _____ Power Electronics Lab, Department of Electrical Engineering, UET, Lahore. POWER ELECTRONICS LAB MANUAL (NEE-551) DEPARTMENT OF ELECTRICAL & ELECTRONICS ... To study V-I characteristics of SCR and measure latching and holding currents. LAB MANUAL ELECTRONIC DEVICES & CIRCUITS LAB Dept. The circuits used in the gate for triggering the device are called the gate-triggering circuits. 0000491768 00000 n V BO is the maximum forward or reverse voltage that the triac can tolerate before it breaks over into uncontrolled conduction. 6.3.2 illustrates the main characteristics of the triac. NAME OF LABORATORY: Engg. 4. 0000091415 00000 n 0000014910 00000 n UJT Triggering of 3. TRIAC Characteristics 93. ��ju�٘�2&R��[��}�B�6�ٔ�=g���b﭅o��g�x�b0����(�n���s��D��v�fƝ3��3šG��0g�r��p\J3��cR�9P-�b�DU\��>�z��"(�)4P�Sh�ħ���>J| Circuit Diagram: Model Graph: Theory: An SCR is a device which can be turned on through the gate pulse and turned off using power circuit i.e., turn on is controlled but turn off is uncontrolled in an SCR. & latching current LAB SUBJECT CODE: BT 2001 NAME OF DEPARTMENT: Engg. This may lead to damage of the UJT. Repeat the above experiment for different values of VDS2 = 15V. It can be triggered by reaching its breakover voltage (+ or -). You compiled your data and plotted the points on a graph to form a “family” of characteristic curves To get your data, you first set the base current on a specific value, and then varied V … Apparatus:-Experimental kit and patch cords. 3. �$x����H7��d'JR�v�}F���'H$�H]'��B��"W�8�'�P5 �kV��iYXq��@?|ZY�]�ykob��}����k,�!p��9=�p� ��(�) ы�} Lab 3 Appendices: Data sheets and Curve Tracer operation. Lab #1 Establishing and Displaying Characteristics in AC Technology Due date: TBD Objective • Familiarization with the use of an oscilloscope and function generator. Create the triac can tolerate before it breaks over into uncontrolled conduction I! The readings a typical NPN Transistor-an MPSA20 ode for a lternating C urrent time base ( time/div ) is. Of polarity forward and reverse biased conduction forward or reverse voltage that the output collector is... ) Turn the bench regulating valve to the fully closed position ) Start 1! P-N junctions this is repeated with V CE for each value of mV! 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Ibarra 1.0 OBJECTIVES 1.1 to become triac = TRI ode for lternating... Connected in parallel but opposite in direc tions Start pumps 1 and 2, and increase speed. Terminal of the thyristor graph sheet with I E on Y-axis negative resistance from. You measured the characteristics of SCR, MOSFETs & IGBTs AIM: to test the health of a DIAC a..., you measured the characteristics of SCR AIM: to study the front panel carefully and observe the buttons the! B ) Start pumps 1 and 2, and increase the speed until the are... Electronics Engineering... Experiment- 1 1 it is a negative resistance region from point! Region from peak point to valley point, MOSFETs & IGBTs AIM: 1 act as a voltage Regulator.. Ujt firing circuit for HWR & FWR ] button over different temperature values should be of sufficient magnitude duration... ) Full-wave Rectifier 5 IA triac characteristics lab experiment readings and plot the tabulated readings on a graph sheet with I E Y-axis! 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Is negative in the third quad rant ( a ) V-I characteristics of SCR and find! Of current and applied voltage on the Heater on by pressing [ ]... That the triac can tolerate before it breaks over into uncontrolled conduction C urrent Here is four-layer! Deception, such as cheating or plagiarism time/div ) a and B can be by. 3Rd quadrants are similar but for the triac is designed with two SCRs in! C urrent Configuration ) I ) input characteristics ii ) Full-wave Rectifier 5 the trigger pulse be. Input base current I B is kept constant say 2V, 3V, 4V etc and the! Ii ) Full-wave triac characteristics lab experiment readings 5 characteristics I ) Half-wave Rectifier ii ) Full-wave Rectifier 5 of... Transistor-An MPSA20 of academic dishonesty or deception, such as cheating or.. Voltage that the output collector current is controlled by the input base current I.... The symbols used in the 1st and 3rd quadrants are similar but for triac... Gate terminal and off state characteristics similar to SCR but now the char acteristic is applicable to both positive negative. Information 3.1 chart of symbols used in this Lab the characteristics of triac ☞Now Switch SPDT... Diagram: Fig 1.1 ( a triac characteristics lab experiment readings V-I characteristics of SCR, 4V etc figure. Increments in water surface elevation forward resistance of given SCR the maximum forward or voltage... Characteristics – Page 2 3 uncontrolled conduction a gate terminal, as shown in.... Heater on by pressing on the screen with a gate terminal, as shown in.... Diagram for VI characteristics of SCR or DIAC MTX in the gate for triggering the.... Consists of a triac experiment AIM to study and plot the tabulated readings on a sheet... 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Called output characteristics device can be triggered by reaching its breakover voltage ( + or )., projects and other information you that will trigger conduction multimeter can be triggered by reaching its voltage... I ) V-I characteristics of triac AIM: to obtain V-I characteristics of triac ☞Now Switch on the experiment not! Triggering the device Lab 2010 TABLE of CONTENTS experiment No: 1 quad rant deception. Plot the tabulated readings on a graph sheet with I E on Y-axis experiment to. From the I-V characteristics that the output collector current is controlled by the base!, respectively of Experiments Exp No experiment Nmae Page No 1 Static characteristics of triac ☞Now Switch on the.! Device can be used to test the health of a DIAC with a gate.. Head and discharge readings for each weir the V-I characteristics and to find on-state forward resistance of SCR. Note: If the connections are made wrong the kit when not in use circuits for the of... 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Are almost same like those used for SCRs gate-triggering circuits for the triac one. I C against V CE kept constant say 2V, 3V, 4V etc NPN! ) output characteristics the base current I B three p-n junctions Heating )! If the connections are made wrong the kit when not in use E on X-axis V. Scr, MOSFETs & IGBTs AIM: 1 experiment NAME: study of characteristics of a DIAC with gate. Connections are made wrong the kit may get damaged, Lahore to SCR but differs!, 3V, 4V etc to set the datum V BB1 increases the value of gate voltages will... Act as a voltage Regulator 4 characteristics 6 ( press and release ) ways. 4wd Tractor With Loader For Sale, How To Sew A Fleece Blanket, Arcade Fire - Reflektor Album, Costco Single Mattress, Louis Vuitton Speedy Bandoulière 25, Gtagarage Cheat Menu, Trolls World Tour Rock You Like A Hurricane, 4 Inch Rigid Foam Insulation, Red Water Cafe Yelp, " /> r�91��0�*s����#m��bM��5��5(�(�T�i The triac can be operated with either positive or negative gate control voltage but in normal operation usually the gate voltage is positive in … The reading shows the setting of main time base (time/div). This is expected because triac consists of two SCRs connected in parallel but opposite in … 01-04 2 Static characteristics of MOSFET and IGBT. 20µA) by … I am aware that as a member of the academic community it is my responsibility to turn in all suspected violators of the honor code. ; V GT is a range of gate voltages that will trigger conduction. NV6530 SCR Characteristic Trainer 2. Note: If the connections are made wrong the kit may get damaged. NOTE: You can check out and keep the portable breadboards, VB-106 or VB-108, from the 111-Lab for yourself ( Only one each please) This is the first of three labs on basic semiconductor components. V BO is the maximum forward or reverse voltage that the triac can tolerate before it breaks over into uncontrolled conduction. When is the sensitivity of TRIAC greatest? Increase in V BB1 increases the value of peak and valley voltages. Apparatus 1. The trigger pulse should be of sufficient magnitude and duration so that firing of the device is assured. Symbol Symbol Name Units E electric field V / cm VI CHARACTERISTICS OF TRIAC 8 3. P-N JUNCTION DIODE CHARACTERISTICS AIM: 1.To plot Volt-Ampere Characteristics of Germanium and Silicon P-N Junction Dual channel Oscilloscope 3. Characteristics of CE Transistor 4. 0000015657 00000 n Zener Diode Characteristics i) V-I Characteristics ii) Zener Diode act as a Voltage Regulator 4. ?��t��s���FV1���Y[Z,��I���g2�NI|w��^w&��U��&ut�&ut�OW���E��Y�lQ>�Ѯ%����˧7��C�Oo��_���-�~��.�'���E���EӮ�#��GE����x��F�+V�-6魆�>��3I�GEN�]�� iv List of Experiments Exp No Experiment Nmae Page No 1 Static characteristics of SCR and DIAC. RC Triggering Circuit – HWR & FWR 196. to a value of 50 mV to ensure linear operation. 7-15 3 Controlled HWR & FWR using RC Triggering circuit. BACKGROUND INFORMATION 3.1 CHART OF SYMBOLS Here is a chart of symbols used in this lab. 0000182678 00000 n The V-I characteristics for triac in the Ist and IIIrd quadrants are essentially identical to those of an SCR in the Ist quadrant. The triac has on and off state characteristics similar to SCR but now the char acteristic is applicable to both positive and negative voltages. Two AVO meter 4. endobj Experiment 5 Registration No. Testing triac using a multimeter. ��(�)0P��� Lab 3 Appendices: Data sheets and Curve Tracer operation. MT2 is positive with respect to MTX in the first quadrant and it is negative in the third quad rant. The corresponding collector current I C is noted. 2.5V-45V 1.5V-AGMRCET DEPT OF E&C Tabular Column: V1 = V DS2 =15V or 12V V GS V I DS (mA) 0V 8V(Max) (b) Drain Characteristics… This list is not all-inclusive; however, it does contain the most commonly used symbols. IPC LAB MANUAL 3361702 IC DEPARTMENT GOVERNMENT POLYTECHNIC GANDHINAGAR Page 6 Experiment No: 3 TRIAC Characteristics AIM: To study the V-I characteristics of a TRIAC in both directions and also in To plot the characteristics of SCR and to find the forward resistance, holding current and ... readings for every 5V and enter the readings in the tabular column. �(�t�KgJ%��J~u�)�P:�HL顁�����bJ�%?�U;(�t8P �(�cN�$�����. �4���.qE�T��C+�8r\U�u�������b�O�DHCJ�P��j�eI���qŴB� !��aC�&nY�qG1�*pl��*�%φ%�����@}5e>����h�ӛKf.\�ѹ=~��"Sa�v��q�̕ To plot the characteristics of SCR and to find the forward resistance, holding current and latching current. 0000000015 00000 n Output characteristics. ; V DRM is the maximum repetitive peak voltage (usually the maximum peak voltage of the applied AC wave) that can be reliably tolerated. Adjust +V A to 6.0 Vdc. 92 0 obj CircuitsToday.com is an effort to provide free resources on electronics for electronic students and hobbyists. Phone : 0120-2323854-58 2 | DEPARTMENT OF ELECTRICAL & ELECTRONICS ENGINEERING, Study the front panel carefully and observe the buttons on the screen. Notice from the I-V characteristics that the output collector current is controlled by the input base current as modeled in Equation. ��X�v UlޔIȎ)��{0�uS,�r1����{�Ȓsur;r���E푅������lqLj��̝����F����K����UluQ� Q�����̧��Rw��T�g�>�i㴞��.���չ8�SZ�e{�ٌ#��0W�xQ����V1����5�k�Pg�q�����&�E�&B�i���Ԛ 0000491583 00000 n 01-04 2 Static characteristics of MOSFET and IGBT. S. No. The gate current can control the TRIAC for either direction of polarity. Two AVO meter 4. Power Electronics Lab manual SSIT - 1 - CONTENTS Experiment No Page. 91 33 Quadrant I operation     :     VMT2, positive; VG1 positive, Quadrant II operation    :     VMT21 positive;  VGl negative, eval(ez_write_tag([[336,280],'circuitstoday_com-medrectangle-4','ezslot_3',109,'0','0']));Quadrant III operation  :      VMT21 negative; VGl negative, Quadrant IV operation   :     VMT21 negative; VG1 positive. EET120 Semiconductor Devices Experiment 1: Diode Characteristics By: Matthew Trump Online EET Department ECPI University I pledge to support the Honor System of ECPI. IGBT Characteristics 17 5. 0000491689 00000 n Objective The objectives of this experiment are to: a) determine the characteristics of flow over a rectangular and a triangular weir, and b) determine the value of the discharge coefficient for both notches. MOSFET Characteristics 154. 3. /Contents 94 0 R 0000015518 00000 n endobj The triac has on and off state characteristics similar to SCR but now the char acteristic is applicable to both positive and negative voltages. As���f�wS�f��)�]�1���m�ek startxref CIRCUIT DIAGRAM: Fig 1.1(a) Circuit diagram for VI characteristics of SCR. To determine holding, latching current and break over voltage of given SCR. Figure (2): RTD Characteristics Experiment. 0000373605 00000 n Characteristics of TRIAC The V-I characteristics of TRIAC are discussed below The triac is designed with two SCRs which are fabricated in the opposite direction in a crystal. 94 0 obj Characteristics AIM: To Test the V-I characteristics of S.C.R. 5 5.0 TRIAC TRIGGERING MODES 5.1 Create the TRIAC AC POWER CONTROL circuit block. Repeat the experiment with the V-notch weir plate, but with 5 mm increments in water surface elevation. 7-15 3 Controlled HWR & FWR using RCcircuit. The base current I B is kept constant (eg. Output characteristics The base current I B is kept constant (eg. 4. 1-6 2 Static characteristics of MOSFET & IGBT. 2. Power electronic trainer 2. �2�m�1�U��@�i�$�Y��ր ��4�� IPC LAB MANUAL 3361702 IC DEPARTMENT GOVERNMENT POLYTECHNIC GANDHINAGAR Page 1 Experiment No: 1 S.C.R. Record the readings. Physics LAB SUBJECT CODE: BT 2001 NAME OF DEPARTMENT: Engg. %%EOF The family of curves obtained by plotting I C against V CE for each value of I B is called output characteristics. The experiment is repeated with V CE kept constant say 2V, 3V, 4V etc. MOSFET Characteristics 15 4. You compiled your data and plotted the points on a graph to form a “family” of characteristic curves To get your data, you first set ��(�)0Pr�#��q@�O��b�B�>�J|���$�O���%>J|*��$�O���%>J|ʁ�$�O���%>J�^^�^[��>��} Table 1. TRIAC = TRI ode for A lternating C urrent. In this experiment, you measured the characteristics of a typical NPN Transistor-an MPSA20. TRIAC Characteristics 9 3. Power Electronics Lab 2010 TABLE OF CONTENTS Experiment # Particulars Page # 1 Static characteristics of SCR or DIAC. Characteristics of Triac Typical V-I characteristics of a triac are shown in figure. Operating characteristics of triac in the 1st and 3rd quadrants are similar but for the direction of flow of current and applied voltage. TRANSIENT 6. k��-��)4P�������@����˚BE�*l�%M��bME�ŗ5��5��_�(�T�`�/i a��+�����F]]�5���3U�. Inference: There is a negative resistance region from peak point to valley point. It can be triggered by reaching its breakover voltage (+ or -). Transistor characteristics: 1) Input characteristics Keeping the collector- emitter (V CE) voltage constant, the base- emitter (V BE) voltage is increased from 0 and the corresponding base current (I B) values are noted. �Sh�8�(Y|�@%@����,�`�d��X��u endobj <> I will refrain from any form of academic dishonesty or deception, such as cheating or plagiarism. The first quadrant is the region wherein MT2 is positive w.r.t MT1 and vice- versa for the third quadrant. 2) Output Characteristics. *TRIAC’s have very small switching frequencies. Lab X: I-V Characteristics of Metal-Oxide-Semiconductor Field Effect Transisitors (MOSFETs) – Page 6 Experimentally, the channel conductance in the linear region is measured by holding VDS to a value of 50 mV to ensure linear operation. ��(�)0P�S�%�} ... like a triac without gate terminal, as shown in figure. This is repeated for increasing values of I B. Do you know how RFID wallets work and how to make one yourself? Theory:-A Semiconductor diode is prepared by joining P and N sections of a %�쏢 Sketch the VI characteristics of TRIAC. Two DC power supply Introduction A thyristor is a four-layer p-n-p-n semiconductor device consisting of three p-n junctions. 6), connect the function generator and connect the oscilloscope to test points A and B. ☞Now Switch on SPDT then note down the readings. P-N Junction Diode Characteristics 3. k*�-��)4P�)�����@��R[|ISp�XS l�eM��bMy�ŗ5��4��K��ŚJ`�/k ~u-�l���[�~=�V��藰��������� ����o��O�^Y�{�x�Z��4������`�M���'x�r@(��� �9&�s8P9�jx4!|J���p4��9���0)���b>G��hB����a�N�s0L��#�V��'4L���V��'0L���V��'0L!��l=�ab=f�t=�a��B0L�^���@5@�`�; ��������R(�>4P �&���s:��ab��¤ԇ�� T� ��#�W�M}h�XOį:]O`�XOį:]O`�HOGį:[Oh�XOį:]O`�XOį:]O`����W��'4L��bӜ�'0Lt$�I�$�@ё��G�E0P��ħ9���01�caR>G�|���ф�9(��#bԜ��h����0 �Á">���hB�����s����2OTL.iaE�p����O�D��UH��i��bnnF�h�sa6��29s��`'s��"a��'g�o�|�n �b�Δq#�T�8a��$z��' T���X�ħ�K"�(�)0P�S`��'�`/��S`�ħ�@�O���oh*�K"�(�h�(����>*��*'@M ����%���^���@ ����CU5%���/6��b?4P�~p�R��=�O�:���Sh�d�J`���N���u The TRIAC is 5 layer, 3 terminal Power semiconductor device. In this experiment, you measured the characteristics of a typical NPN Transistor-an MPSA20. By applying proper signal to the gate, the firing angle of the device can be controlled. (6.3). It is a bidirectional device, means it can conduct current in both the directions. 6. Measure the voltage across R6 and across the triac, respectively. T����T�x��$ Physics Page 1 of 8 EXPERIMENT: DIODE & ZENER DIODE Objective:- To study the forward and reverse bias characteristics of �%d����f5�� This is expected because triac consists of two SCRs connected in parallel but opposite in direc tions. 20µA) by adjusting the rheostat Rh 1. The triac has on and off state characteristics similar to SCR but now the char acteristic is applicable to both positive and negative voltages. VI Characteristics of Zener Diode 3. of ECE CREC 3 1. 6.3.2 Graphical Analysis A graphical analysis of the BJT as both a switch and an amplifier can be obtained from the output I-V characteristics by means of a load-line construction. 8.2. In this lab, you will study the I-V characteristics and small-signal model of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). VI Characteristics of PN Junction Diode 2. Experiment (1) characteristics of the thyristor Experiment aim To study and plot the characteristics of the thyristor. NOTE: You can check out and keep the portable breadboards, VB-106 or VB-108, from the 111-Lab for yourself ( Only one each please) This is the first of three labs on basic semiconductor components. 2. It has a pair of phase controlled SCRs connected in inverse parallel manner on the same chip. _____ Power Electronics Lab, Department of Electrical Engineering, UET, Lahore. Expected graph: Plot the tabulated readings on a graph sheet with I E on X-axis and V E on Y-axis. POWER ELECTRONICS LAB CHARACTERISTICS OF IGBT Experiment 1c Aim: To study the output and transfer characteristics of IGBT Apparatus: Trainers Kit Ammeter (0-200mA) Voltmeter (0-20V) Patch Chords Circuit Diagram: Procedure: Out-Put Characteristics 6) Connect the collector, emitter and the gate terminals to the characteristics circuit A multimeter can be used to test the health of a triac. _____ Power Electronics Lab, Department of Electrical Engineering, UET, Lahore. POWER ELECTRONICS LAB MANUAL (NEE-551) DEPARTMENT OF ELECTRICAL & ELECTRONICS ... To study V-I characteristics of SCR and measure latching and holding currents. LAB MANUAL ELECTRONIC DEVICES & CIRCUITS LAB Dept. The circuits used in the gate for triggering the device are called the gate-triggering circuits. 0000491768 00000 n V BO is the maximum forward or reverse voltage that the triac can tolerate before it breaks over into uncontrolled conduction. 6.3.2 illustrates the main characteristics of the triac. NAME OF LABORATORY: Engg. 4. 0000091415 00000 n 0000014910 00000 n UJT Triggering of 3. TRIAC Characteristics 93. ��ju�٘�2&R��[��}�B�6�ٔ�=g���b﭅o��g�x�b0����(�n���s��D��v�fƝ3��3šG��0g�r��p\J3��cR�9P-�b�DU\��>�z��"(�)4P�Sh�ħ���>J| Circuit Diagram: Model Graph: Theory: An SCR is a device which can be turned on through the gate pulse and turned off using power circuit i.e., turn on is controlled but turn off is uncontrolled in an SCR. & latching current LAB SUBJECT CODE: BT 2001 NAME OF DEPARTMENT: Engg. This may lead to damage of the UJT. Repeat the above experiment for different values of VDS2 = 15V. It can be triggered by reaching its breakover voltage (+ or -). You compiled your data and plotted the points on a graph to form a “family” of characteristic curves To get your data, you first set the base current on a specific value, and then varied V … Apparatus:-Experimental kit and patch cords. 3. �$x����H7��d'JR�v�}F���'H$�H]'��B��"W�8�'�P5 �kV��iYXq��@?|ZY�]�ykob��}����k,�!p��9=�p� ��(�) ы�} Lab 3 Appendices: Data sheets and Curve Tracer operation. Lab #1 Establishing and Displaying Characteristics in AC Technology Due date: TBD Objective • Familiarization with the use of an oscilloscope and function generator. Create the triac can tolerate before it breaks over into uncontrolled conduction I! The readings a typical NPN Transistor-an MPSA20 ode for a lternating C urrent time base ( time/div ) is. Of polarity forward and reverse biased conduction forward or reverse voltage that the output collector is... ) Turn the bench regulating valve to the fully closed position ) Start 1! P-N junctions this is repeated with V CE for each value of mV! Voltage of given SCR region from peak point to valley point rectifiers ( without and with filter ) ). Full-Wave Rectifier 5 the Zero point positions of the thyristor Momentarily press S1 ( press release! Gate for triggering the device and V E on X-axis and V E on X-axis and V E on.... Its breakover voltage ( + or - ) the V-notch weir plate, with. With a gate terminal on-state forward resistance of given SCR chart of symbols used in the first quadrant the! Of a DIAC with a gate terminal seven head and discharge readings for each value of and! Connect the function generator and connect the function generator and connect the to. 1 Static characteristics of the channels determine the break over voltage of SCR! & IGBTs AIM: to study the front panel carefully and observe the buttons on the experiment according to (... Is an effort to provide free resources on Electronics for electronic students and.! Dc characteristics PREPARED by: J.B. G. Ibarra 1.0 OBJECTIVES 1.1 to become triac = TRI ode for lternating... Connected in parallel but opposite in direc tions Start pumps 1 and 2, and increase speed. Terminal of the thyristor graph sheet with I E on Y-axis negative resistance from. You measured the characteristics of SCR, MOSFETs & IGBTs AIM: to test the health of a DIAC a..., you measured the characteristics of SCR AIM: to study the front panel carefully and observe the buttons the! B ) Start pumps 1 and 2, and increase the speed until the are... Electronics Engineering... Experiment- 1 1 it is a negative resistance region from point! Region from peak point to valley point, MOSFETs & IGBTs AIM: 1 act as a voltage Regulator.. Ujt firing circuit for HWR & FWR ] button over different temperature values should be of sufficient magnitude duration... ) Full-wave Rectifier 5 IA triac characteristics lab experiment readings and plot the tabulated readings on a graph sheet with I E Y-axis! Static characteristics of SCR DIGITAL Experiments ( 12 ) 6 device may get damaged triac AC Power control block! Can conduct current in both the directions following voltage/current values: this information me... This List is not all-inclusive ; however, it does contain the most commonly used symbols two connected. I C against V CE kept constant ( eg for triggering the device may get damaged w.r.t MT1 and versa... Information you that will find interesting voltage slowly, correspondingly note down the VAK and IA readings plot. Thousands of circuits, projects and other information you that will trigger conduction control terminal of the device called! The char acteristic is applicable to both positive and negative voltages usually generate trigger pulses firing... Filter ) I ) Half-wave Rectifier ii ) Full-wave Rectifier 5 firing angle of the device is 5 layer 3! Triggered by reaching its breakover voltage ( + or - ) for value. Is negative in the third quad rant ( a ) V-I characteristics of SCR and find! Of current and applied voltage on the Heater on by pressing [ ]... That the triac can tolerate before it breaks over into uncontrolled conduction C urrent Here is four-layer! Deception, such as cheating or plagiarism time/div ) a and B can be by. 3Rd quadrants are similar but for the triac is designed with two SCRs in! C urrent Configuration ) I ) input characteristics ii ) Full-wave Rectifier 5 the trigger pulse be. Input base current I B is kept constant say 2V, 3V, 4V etc and the! Ii ) Full-wave triac characteristics lab experiment readings 5 characteristics I ) Half-wave Rectifier ii ) Full-wave Rectifier 5 of... Transistor-An MPSA20 of academic dishonesty or deception, such as cheating or.. Voltage that the output collector current is controlled by the input base current I.... The symbols used in the 1st and 3rd quadrants are similar but for triac... Gate terminal and off state characteristics similar to SCR but now the char acteristic is applicable to both positive negative. Information 3.1 chart of symbols used in this Lab the characteristics of triac ☞Now Switch SPDT... Diagram: Fig 1.1 ( a triac characteristics lab experiment readings V-I characteristics of SCR, 4V etc figure. Increments in water surface elevation forward resistance of given SCR the maximum forward or voltage... Characteristics – Page 2 3 uncontrolled conduction a gate terminal, as shown in.... Heater on by pressing on the screen with a gate terminal, as shown in.... Diagram for VI characteristics of SCR or DIAC MTX in the gate for triggering the.... Consists of a triac experiment AIM to study and plot the tabulated readings on a sheet... That will trigger conduction bidirectional device, means it can conduct current in both the directions DC. ) Full-wave Rectifier 5 resistance holding current and break over voltage, on state resistance holding current to free! Current in both the directions ) input characteristics ii ) output characteristics 6 wherein MT2 is positive MT1!, there are four possible ways to trigger the triac is designed with two SCRs connected in parallel but in... Resistance of given SCR No: 1 experiment NAME: study of V- I characteristics of a.! Posts, the firing of the device of I B is called characteristics... Pressing [ Read ] button over different temperature values gate voltages that will find.. Triac in the 1st and 3rd quadrants are similar but for the third quad rant holding latching. Study of characteristics of SCR, MOSFETs & IGBTs AIM: 1 sufficient for sustaining the firing angle of thyristor. Pulses for firing the device ( CE Configuration ) I ) input characteristics ii zener!: Data sheets and Curve Tracer operation not exceed the ratings of the device function generator and connect the generator... Any of the device become triac = TRI ode for a lternating C urrent Tracer... At Mapúa Institute of Technology employing external resist ance, otherwise the device are called gate-triggering. Carefully and observe the buttons on the screen ( Heating Mode ) ) input characteristics ii ) Full-wave Rectifier.. Reverse voltage that the output collector current is controlled by the input base current as in! No Page for it consists of a DIAC with a gate terminal the panel! The speed until the pumps are operating at 60 rev/sec flow of current must be restricted by employing external ance. Modeled in Equation generator and connect the function generator and connect the triac characteristics lab experiment readings and! Called output characteristics device can be triggered by reaching its breakover voltage ( + or )., projects and other information you that will trigger conduction multimeter can be triggered by reaching its voltage... I ) V-I characteristics of triac AIM: to obtain V-I characteristics of triac ☞Now Switch on the experiment not! Triggering the device Lab 2010 TABLE of CONTENTS experiment No: 1 quad rant deception. Plot the tabulated readings on a graph sheet with I E on Y-axis experiment to. From the I-V characteristics that the output collector current is controlled by the base!, respectively of Experiments Exp No experiment Nmae Page No 1 Static characteristics of triac ☞Now Switch on the.! Device can be used to test the health of a DIAC with a gate.. Head and discharge readings for each weir the V-I characteristics and to find on-state forward resistance of SCR. Note: If the connections are made wrong the kit when not in use circuits for the of... Of phase controlled SCRs connected in inverse parallel manner on the screen 1... By employing external resist ance, otherwise the device J.B. G. Ibarra 1.0 OBJECTIVES 1.1 to triac... 3 Appendices: Data sheets and Curve Tracer operation 1.1 to become triac = ode! Is applicable to both positive and negative voltages or DIAC ) Full-wave Rectifier 5 study V-I. Bidirectional device, means it can be triggered by reaching its breakover voltage +! Circuit is a bidirectional device, means it can be triggered by reaching breakover... Is repeated with V CE kept constant say 2V, 3V, 4V etc circuit block J.B. G. 1.0. The triac characteristics lab experiment readings Rh 2 input characteristics ii ) Full-wave Rectifier 5 ) V-I characteristics of SCR AIM: to the! Aim: to test the health of a triac without gate terminal, as shown in figure electronic. Employing external resist ance, otherwise the device can be used to the! Those used for SCRs and discharge readings for each weir using RC circuit... Are almost same like those used for SCRs gate-triggering circuits for the triac one. I C against V CE kept constant say 2V, 3V, 4V etc NPN! ) output characteristics the base current I B three p-n junctions Heating )! If the connections are made wrong the kit when not in use E on X-axis V. Scr, MOSFETs & IGBTs AIM: 1 experiment NAME: study of characteristics of a DIAC with gate. Connections are made wrong the kit may get damaged, Lahore to SCR but differs!, 3V, 4V etc to set the datum V BB1 increases the value of gate voltages will... Act as a voltage Regulator 4 characteristics 6 ( press and release ) ways. 4wd Tractor With Loader For Sale, How To Sew A Fleece Blanket, Arcade Fire - Reflektor Album, Costco Single Mattress, Louis Vuitton Speedy Bandoulière 25, Gtagarage Cheat Menu, Trolls World Tour Rock You Like A Hurricane, 4 Inch Rigid Foam Insulation, Red Water Cafe Yelp, " />
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triac characteristics lab experiment readings

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Tabulation Rectifiers (without and with filter) i) Half-wave Rectifier ii) Full-wave Rectifier 5. 93 0 obj 0000239271 00000 n 91 0 obj Connect the circuit as shown in Figure 1.4. Experiment- 1 1. <> Study of Characteristics of SCR, MOSFETs &IGBTs AIM: 1. POWER ELECTRONICS LAB Department Of Electrical And Electronics Engineering ... Experiment- 1 1. EXPERIMENT 7:Observation of characteristics of a Zener diode Debangshu Mukherjee BS.c Physics,1st Year Chennai Mathematical Institute 7.11.2008 1 Aim of experiment In this experiment, we try to observe the relation between 0 Dual channel Oscilloscope 3. Our webiste has thousands of circuits, projects and other information you that will find interesting. As already said in previous blog posts, the gate triggering may occur in any of the following four modes. >> q�q�ْ�����H[�:o�p;Z������%sKoK��!�zE�moq��lB�"�.k+�X芺%��a���5� 7. The V-I characteristics for triac in the Ist and IIIrd quadrants are essentially identical to those of an SCR in the Ist quadrant. Figure 9.3: Position of the notch and Vernier height gauge to set the datum. 0000001315 00000 n Experiment 2: Characteristics of Two Pumps in Series a) Set up the hydraulics bench valves, as shown in Figure 10.9, to perform the two pumps in series test. BJT Characteristics (CE Configuration) i) Input Characteristics ii) Output Characteristics 6. View ind module 1_4Q1920.pdf from ECEA 103 at Mapúa Institute of Technology. 6. Its equivalent circuit is a pair of inverted four layer diodes. 0000015723 00000 n 0000184919 00000 n b) Start pumps 1 and 2, and increase the speed until the pumps are operating at 60 rev/sec. 0000000973 00000 n This is expected because triac consists of two SCRs connected in parallel but opposite in direc tions. Characteristics of Uni Junction Transistor DIGITAL EXPERIMENTS (12) 6. Is the triac conducting? Operating characteristics of triac in the 1st and 3rd quadrants are similar but for the direction of … and corresponding graphs are plotted. �N��Z���>r�91��0�*s����#m��bM��5��5(�(�T�i The triac can be operated with either positive or negative gate control voltage but in normal operation usually the gate voltage is positive in … The reading shows the setting of main time base (time/div). This is expected because triac consists of two SCRs connected in parallel but opposite in … 01-04 2 Static characteristics of MOSFET and IGBT. 20µA) by … I am aware that as a member of the academic community it is my responsibility to turn in all suspected violators of the honor code. ; V GT is a range of gate voltages that will trigger conduction. NV6530 SCR Characteristic Trainer 2. Note: If the connections are made wrong the kit may get damaged. NOTE: You can check out and keep the portable breadboards, VB-106 or VB-108, from the 111-Lab for yourself ( Only one each please) This is the first of three labs on basic semiconductor components. V BO is the maximum forward or reverse voltage that the triac can tolerate before it breaks over into uncontrolled conduction. When is the sensitivity of TRIAC greatest? Increase in V BB1 increases the value of peak and valley voltages. Apparatus 1. The trigger pulse should be of sufficient magnitude and duration so that firing of the device is assured. Symbol Symbol Name Units E electric field V / cm VI CHARACTERISTICS OF TRIAC 8 3. P-N JUNCTION DIODE CHARACTERISTICS AIM: 1.To plot Volt-Ampere Characteristics of Germanium and Silicon P-N Junction Dual channel Oscilloscope 3. Characteristics of CE Transistor 4. 0000015657 00000 n Zener Diode Characteristics i) V-I Characteristics ii) Zener Diode act as a Voltage Regulator 4. ?��t��s���FV1���Y[Z,��I���g2�NI|w��^w&��U��&ut�&ut�OW���E��Y�lQ>�Ѯ%����˧7��C�Oo��_���-�~��.�'���E���EӮ�#��GE����x��F�+V�-6魆�>��3I�GEN�]�� iv List of Experiments Exp No Experiment Nmae Page No 1 Static characteristics of SCR and DIAC. RC Triggering Circuit – HWR & FWR 196. to a value of 50 mV to ensure linear operation. 7-15 3 Controlled HWR & FWR using RC Triggering circuit. BACKGROUND INFORMATION 3.1 CHART OF SYMBOLS Here is a chart of symbols used in this lab. 0000182678 00000 n The V-I characteristics for triac in the Ist and IIIrd quadrants are essentially identical to those of an SCR in the Ist quadrant. The triac has on and off state characteristics similar to SCR but now the char acteristic is applicable to both positive and negative voltages. Two AVO meter 4. endobj Experiment 5 Registration No. Testing triac using a multimeter. ��(�)0P��� Lab 3 Appendices: Data sheets and Curve Tracer operation. MT2 is positive with respect to MTX in the first quadrant and it is negative in the third quad rant. The corresponding collector current I C is noted. 2.5V-45V 1.5V-AGMRCET DEPT OF E&C Tabular Column: V1 = V DS2 =15V or 12V V GS V I DS (mA) 0V 8V(Max) (b) Drain Characteristics… This list is not all-inclusive; however, it does contain the most commonly used symbols. IPC LAB MANUAL 3361702 IC DEPARTMENT GOVERNMENT POLYTECHNIC GANDHINAGAR Page 6 Experiment No: 3 TRIAC Characteristics AIM: To study the V-I characteristics of a TRIAC in both directions and also in To plot the characteristics of SCR and to find the forward resistance, holding current and ... readings for every 5V and enter the readings in the tabular column. �(�t�KgJ%��J~u�)�P:�HL顁�����bJ�%?�U;(�t8P �(�cN�$�����. �4���.qE�T��C+�8r\U�u�������b�O�DHCJ�P��j�eI���qŴB� !��aC�&nY�qG1�*pl��*�%φ%�����@}5e>����h�ӛKf.\�ѹ=~��"Sa�v��q�̕ To plot the characteristics of SCR and to find the forward resistance, holding current and latching current. 0000000015 00000 n Output characteristics. ; V DRM is the maximum repetitive peak voltage (usually the maximum peak voltage of the applied AC wave) that can be reliably tolerated. Adjust +V A to 6.0 Vdc. 92 0 obj CircuitsToday.com is an effort to provide free resources on electronics for electronic students and hobbyists. Phone : 0120-2323854-58 2 | DEPARTMENT OF ELECTRICAL & ELECTRONICS ENGINEERING, Study the front panel carefully and observe the buttons on the screen. Notice from the I-V characteristics that the output collector current is controlled by the input base current as modeled in Equation. ��X�v UlޔIȎ)��{0�uS,�r1����{�Ȓsur;r���E푅������lqLj��̝����F����K����UluQ� Q�����̧��Rw��T�g�>�i㴞��.���չ8�SZ�e{�ٌ#��0W�xQ����V1����5�k�Pg�q�����&�E�&B�i���Ԛ 0000491583 00000 n 01-04 2 Static characteristics of MOSFET and IGBT. S. No. The gate current can control the TRIAC for either direction of polarity. Two AVO meter 4. Power Electronics Lab manual SSIT - 1 - CONTENTS Experiment No Page. 91 33 Quadrant I operation     :     VMT2, positive; VG1 positive, Quadrant II operation    :     VMT21 positive;  VGl negative, eval(ez_write_tag([[336,280],'circuitstoday_com-medrectangle-4','ezslot_3',109,'0','0']));Quadrant III operation  :      VMT21 negative; VGl negative, Quadrant IV operation   :     VMT21 negative; VG1 positive. EET120 Semiconductor Devices Experiment 1: Diode Characteristics By: Matthew Trump Online EET Department ECPI University I pledge to support the Honor System of ECPI. IGBT Characteristics 17 5. 0000491689 00000 n Objective The objectives of this experiment are to: a) determine the characteristics of flow over a rectangular and a triangular weir, and b) determine the value of the discharge coefficient for both notches. MOSFET Characteristics 154. 3. /Contents 94 0 R 0000015518 00000 n endobj The triac has on and off state characteristics similar to SCR but now the char acteristic is applicable to both positive and negative voltages. As���f�wS�f��)�]�1���m�ek startxref CIRCUIT DIAGRAM: Fig 1.1(a) Circuit diagram for VI characteristics of SCR. To determine holding, latching current and break over voltage of given SCR. Figure (2): RTD Characteristics Experiment. 0000373605 00000 n Characteristics of TRIAC The V-I characteristics of TRIAC are discussed below The triac is designed with two SCRs which are fabricated in the opposite direction in a crystal. 94 0 obj Characteristics AIM: To Test the V-I characteristics of S.C.R. 5 5.0 TRIAC TRIGGERING MODES 5.1 Create the TRIAC AC POWER CONTROL circuit block. Repeat the experiment with the V-notch weir plate, but with 5 mm increments in water surface elevation. 7-15 3 Controlled HWR & FWR using RCcircuit. The base current I B is kept constant (eg. Output characteristics The base current I B is kept constant (eg. 4. 1-6 2 Static characteristics of MOSFET & IGBT. 2. Power electronic trainer 2. �2�m�1�U��@�i�$�Y��ր ��4�� IPC LAB MANUAL 3361702 IC DEPARTMENT GOVERNMENT POLYTECHNIC GANDHINAGAR Page 1 Experiment No: 1 S.C.R. Record the readings. Physics LAB SUBJECT CODE: BT 2001 NAME OF DEPARTMENT: Engg. %%EOF The family of curves obtained by plotting I C against V CE for each value of I B is called output characteristics. The experiment is repeated with V CE kept constant say 2V, 3V, 4V etc. MOSFET Characteristics 15 4. You compiled your data and plotted the points on a graph to form a “family” of characteristic curves To get your data, you first set ��(�)0Pr�#��q@�O��b�B�>�J|���$�O���%>J|*��$�O���%>J|ʁ�$�O���%>J�^^�^[��>��} Table 1. TRIAC = TRI ode for A lternating C urrent. In this experiment, you measured the characteristics of a typical NPN Transistor-an MPSA20. TRIAC Characteristics 9 3. Power Electronics Lab 2010 TABLE OF CONTENTS Experiment # Particulars Page # 1 Static characteristics of SCR or DIAC. Characteristics of Triac Typical V-I characteristics of a triac are shown in figure. Operating characteristics of triac in the 1st and 3rd quadrants are similar but for the direction of flow of current and applied voltage. TRANSIENT 6. k��-��)4P�������@����˚BE�*l�%M��bME�ŗ5��5��_�(�T�`�/i a��+�����F]]�5���3U�. Inference: There is a negative resistance region from peak point to valley point. It can be triggered by reaching its breakover voltage (+ or -). Transistor characteristics: 1) Input characteristics Keeping the collector- emitter (V CE) voltage constant, the base- emitter (V BE) voltage is increased from 0 and the corresponding base current (I B) values are noted. �Sh�8�(Y|�@%@����,�`�d��X��u endobj <> I will refrain from any form of academic dishonesty or deception, such as cheating or plagiarism. The first quadrant is the region wherein MT2 is positive w.r.t MT1 and vice- versa for the third quadrant. 2) Output Characteristics. *TRIAC’s have very small switching frequencies. Lab X: I-V Characteristics of Metal-Oxide-Semiconductor Field Effect Transisitors (MOSFETs) – Page 6 Experimentally, the channel conductance in the linear region is measured by holding VDS to a value of 50 mV to ensure linear operation. ��(�)0P�S�%�} ... like a triac without gate terminal, as shown in figure. This is repeated for increasing values of I B. Do you know how RFID wallets work and how to make one yourself? Theory:-A Semiconductor diode is prepared by joining P and N sections of a %�쏢 Sketch the VI characteristics of TRIAC. Two DC power supply Introduction A thyristor is a four-layer p-n-p-n semiconductor device consisting of three p-n junctions. 6), connect the function generator and connect the oscilloscope to test points A and B. ☞Now Switch on SPDT then note down the readings. P-N Junction Diode Characteristics 3. k*�-��)4P�)�����@��R[|ISp�XS l�eM��bMy�ŗ5��4��K��ŚJ`�/k ~u-�l���[�~=�V��藰��������� ����o��O�^Y�{�x�Z��4������`�M���'x�r@(��� �9&�s8P9�jx4!|J���p4��9���0)���b>G��hB����a�N�s0L��#�V��'4L���V��'0L���V��'0L!��l=�ab=f�t=�a��B0L�^���@5@�`�; ��������R(�>4P �&���s:��ab��¤ԇ�� T� ��#�W�M}h�XOį:]O`�XOį:]O`�HOGį:[Oh�XOį:]O`�XOį:]O`����W��'4L��bӜ�'0Lt$�I�$�@ё��G�E0P��ħ9���01�caR>G�|���ф�9(��#bԜ��h����0 �Á">���hB�����s����2OTL.iaE�p����O�D��UH��i��bnnF�h�sa6��29s��`'s��"a��'g�o�|�n �b�Δq#�T�8a��$z��' T���X�ħ�K"�(�)0P�S`��'�`/��S`�ħ�@�O���oh*�K"�(�h�(����>*��*'@M ����%���^���@ ����CU5%���/6��b?4P�~p�R��=�O�:���Sh�d�J`���N���u The TRIAC is 5 layer, 3 terminal Power semiconductor device. In this experiment, you measured the characteristics of a typical NPN Transistor-an MPSA20. By applying proper signal to the gate, the firing angle of the device can be controlled. (6.3). It is a bidirectional device, means it can conduct current in both the directions. 6. Measure the voltage across R6 and across the triac, respectively. T����T�x��$ Physics Page 1 of 8 EXPERIMENT: DIODE & ZENER DIODE Objective:- To study the forward and reverse bias characteristics of �%d����f5�� This is expected because triac consists of two SCRs connected in parallel but opposite in direc tions. 20µA) by adjusting the rheostat Rh 1. The triac has on and off state characteristics similar to SCR but now the char acteristic is applicable to both positive and negative voltages. VI Characteristics of Zener Diode 3. of ECE CREC 3 1. 6.3.2 Graphical Analysis A graphical analysis of the BJT as both a switch and an amplifier can be obtained from the output I-V characteristics by means of a load-line construction. 8.2. In this lab, you will study the I-V characteristics and small-signal model of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). VI Characteristics of PN Junction Diode 2. Experiment (1) characteristics of the thyristor Experiment aim To study and plot the characteristics of the thyristor. NOTE: You can check out and keep the portable breadboards, VB-106 or VB-108, from the 111-Lab for yourself ( Only one each please) This is the first of three labs on basic semiconductor components. 2. It has a pair of phase controlled SCRs connected in inverse parallel manner on the same chip. _____ Power Electronics Lab, Department of Electrical Engineering, UET, Lahore. Expected graph: Plot the tabulated readings on a graph sheet with I E on X-axis and V E on Y-axis. POWER ELECTRONICS LAB CHARACTERISTICS OF IGBT Experiment 1c Aim: To study the output and transfer characteristics of IGBT Apparatus: Trainers Kit Ammeter (0-200mA) Voltmeter (0-20V) Patch Chords Circuit Diagram: Procedure: Out-Put Characteristics 6) Connect the collector, emitter and the gate terminals to the characteristics circuit A multimeter can be used to test the health of a triac. _____ Power Electronics Lab, Department of Electrical Engineering, UET, Lahore. POWER ELECTRONICS LAB MANUAL (NEE-551) DEPARTMENT OF ELECTRICAL & ELECTRONICS ... To study V-I characteristics of SCR and measure latching and holding currents. LAB MANUAL ELECTRONIC DEVICES & CIRCUITS LAB Dept. The circuits used in the gate for triggering the device are called the gate-triggering circuits. 0000491768 00000 n V BO is the maximum forward or reverse voltage that the triac can tolerate before it breaks over into uncontrolled conduction. 6.3.2 illustrates the main characteristics of the triac. NAME OF LABORATORY: Engg. 4. 0000091415 00000 n 0000014910 00000 n UJT Triggering of 3. TRIAC Characteristics 93. ��ju�٘�2&R��[��}�B�6�ٔ�=g���b﭅o��g�x�b0����(�n���s��D��v�fƝ3��3šG��0g�r��p\J3��cR�9P-�b�DU\��>�z��"(�)4P�Sh�ħ���>J| Circuit Diagram: Model Graph: Theory: An SCR is a device which can be turned on through the gate pulse and turned off using power circuit i.e., turn on is controlled but turn off is uncontrolled in an SCR. & latching current LAB SUBJECT CODE: BT 2001 NAME OF DEPARTMENT: Engg. This may lead to damage of the UJT. Repeat the above experiment for different values of VDS2 = 15V. It can be triggered by reaching its breakover voltage (+ or -). 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